عنوان

Ferroelectric thin films :

(Number (ISBN

3540314792

(Number (ISBN

9783540314790

Number

b539218

Title Proper

Ferroelectric thin films :

General Material Designation

[Book]

Other Title Information

basic properties and device physics for memory applications

First Statement of Responsibility

Masanori Okuyama, Yoshihiro Ishibashi (eds.).

Place of Publication, Distribution, etc.

Berlin ; New York

Name of Publisher, Distributor, etc.

Springer

Date of Publication, Distribution, etc.

©2005.

Specific Material Designation and Extent of Item

(xiii, 244 p.) : illustrations, fichiers PDF

Series Title

Topics in applied physics (En ligne), v. 98.

Text of Note

Titre de l'écran-titre (visionné le 5 janvier 2009).

Text of Note

Theoretical Aspects of Phase Transitions in Ferroelectric Thin Films.- Chemical Solution Deposition of Layered-Structured Ferroelectric Thin Films.- PB-Based Ferroelectric Thin Films Prepared by MOCVD.- Spontaneous Polarization and Crystal Orientation Control of MOCVD PZT and Bi4Ti3O12-Based Films.- Rhombohedral PZT Thin Films Prepared by Sputtering.- Scanning Nonlinear Dielectric Microscope.- Analysis of Ferroelectricity and Enhanced Piezoelectricity near Morphotropic Phase Boundary.- Correlation between Domain Structures in Dielectric Properties in Single Crystals of Ferroelectric Solid Solutions.- Relaxor Behaviors in Perovskite-Type Dielectric Compounds.- Artificial Control of Ordered/Disordered State of B-Site Ions in Ba(Zr,Ti)O3 by a Superlattice Technique.- Physics of Ferroelectric Interface: An Attempt to Nano-Ferrolectric Physics.- Preparation and Property of Ferroelectic-Insulator-Semiconductor Junction Using YMNO3 Thin Film.- Improvement of Memory Retention in Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Structure.

Couches minces.

Ferroélectricité

Masanori Okuyama, Yoshihiro Ishibashi (eds.).

Masanori Okuyama

Yoshihiro Ishibashi

Electronic name

[Book]

Y