عنوان
پدید آورنده
موضوع
رده
TK7871.96.B55 S55 2006
TK7871
.
96
.
B55
S55
2006
کتابخانه
محل استقرار
INTERNATIONAL STANDARD BOOK NUMBER
(Number (ISBN
0849335590 (alk. paper)
NATIONAL BIBLIOGRAPHY NUMBER
Number
b521829
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
The silicon heterostructure handbook :
General Material Designation
[Book]
Other Title Information
materials, fabrication, devices, circuits, and applications of SiGe and Si strained-layer epitaxy /
First Statement of Responsibility
edited by John D. Cressler
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
Boca Raton, FL :
Name of Publisher, Distributor, etc.
CRC/Taylor & Francis,
Date of Publication, Distribution, etc.
2006
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
xix, 1227 p. :
Other Physical Details
ill. ;
Dimensions
27 cm
INTERNAL BIBLIOGRAPHIES/INDEXES NOTE
Text of Note
Includes bibliographical references and index
TOPICAL NAME USED AS SUBJECT
Bipolar transistors, Handbooks, manuals, etc
Silicon, Handbooks, manuals, etc
DEWEY DECIMAL CLASSIFICATION
Number
621
.
3815/28
Edition
22
LIBRARY OF CONGRESS CLASSIFICATION
Class number
TK7871
.
96
.
B55
Book number
S55
2006
PERSONAL NAME - ALTERNATIVE RESPONSIBILITY
Cressler, John D
ORIGINATING SOURCE
Date of Transaction
20051212000000.0
ELECTRONIC LOCATION AND ACCESS
Electronic name
مطالعه متن کتاب [Book]
Y
