عنوان

Nitride semiconductors :

(Number (ISBN

3527403876

(Number (ISBN

9783527403875

Number

b513070

Title Proper

Nitride semiconductors :

General Material Designation

[Book]

Other Title Information

handbook on materials and devices /

First Statement of Responsibility

[edited by] Pierre Ruterana, Martin Albrecht, Jörg Neugebauer

Edition Statement

First edition

Place of Publication, Distribution, etc.

[Great Britain] :

Name of Publisher, Distributor, etc.

Wiley-VCH,

Date of Publication, Distribution, etc.

[2003]

Date of Publication, Distribution, etc.

©2003

Specific Material Designation and Extent of Item

xxii, 664 pages :

Other Physical Details

illustrations ;

Dimensions

25 cm

Text of Note

Includes bibliographical references and index

Text of Note

Pt. 1. Material -- 1. High-Pressure Crystallization of GaN / Izabella Grzegory, Stanislaw Krukowski, Michael Leszczynski, Piotr Perlin, Tadeusz Suski and Sylwester Porowski -- 2. Epitaxial Lateral Overgrowth of GaN / Pierre Gibart, Bernard Beaumont and Philippe Vennegues -- 3. Plasma-Assisted Molecular Beam Epitaxy of III-V Nitrides / Alexandros Georgakilas, Hock Min Ng and Philomela Komninou -- 4. Growth of Gallium Nitride by Hydride Vapor Phase Epitaxy / Agnes Trassoudaine, Robert Cadoret and Eric Aujol -- 5. Growth and Properties of InN / Valery Davydov, Albert Klochikhin, Sergey Ivanov, Jochen Aderhold and Akio Yamamoto -- 6. Surface Structure and Adatom Kinetics of Group-III Nitrides / Jorg Neugebauer -- Pt. 2. Defects and Interfaces -- 7. Topological Analysis of Defects in Nitride Semiconductors / Georgios P. Dimitrakopulos, Philomela Komninou, Theodoros Karakostas and Robert C. Pond -- 8. Extended Defects in Wurtzite GaN Layers: Atomic Structure, Formation, and Interaction Mechanisms / Pierre Ruterana, Ana M. Sanchez and Gerard Nouet -- 9. Strain, Chemical Composition, and Defects Analysis at Atomic Level in GaN-based Epitaxial Layers / Slawomir Kret, Pierre Ruterana, Claude Delamarre, Tarek Benabbas and Pawel Dluzewski -- Pt. 3. Processing and Devices -- 10. Ohmic Contracts to GaN / Philip J. Hartlieb, Robert F. Davis and Robert J. Nemanich -- 11. Electroluminescent Diodes and Laser Diodes / Hiroshi Amano -- 12. GaN-Based Modulation-Doped FETs and Heterojunction Bipolar Transistors / Hadis Morkoc and Lianghong Liu -- 13. GaN-Based UV Photodetectors / Franck Omnes and Eva Monroy

0

Nitrides, Handbooks, manuals, etc

Semiconductors-- Materials, Handbooks, manuals, etc

TK

Number

Edition

Class number

Book number

Albrecht, Martin

Neugebauer, Jörg

Ruterana, Pierre

Date of Transaction

20160712071913.0

Electronic name

[Book]

Y