عنوان

Principles of lithography /

(Number (ISBN

0819456608

(Number (ISBN

9780819456601

Number

dltt

Title Proper

Principles of lithography /

General Material Designation

[Book]

First Statement of Responsibility

Harry J. Levinson.

Edition Statement

Second edition.

Specific Material Designation and Extent of Item

xii, 423 pages :

Other Physical Details

illustrations ;

Dimensions

26 cm.

Series Title

Press monograph series ;

Volume Designation

PM146

Text of Note

Includes bibliographical references and index.

Text of Note

Preface -- 1. Overview of lithography -- Problems.

Text of Note

10. The limits of optical lithography -- 10.1 The diffraction limit -- 10.2 Improvements in optics -- 10.3 The shortest wavelength -- 10.4 Improved photoresists -- 10.5 Flatter wafers -- 10.6 How low can k1 go? -- 10.7 Immersion lithography and maximum numerical aperture -- 10.8 How far can optical lithography be extended? -- 10.9 Resist limits -- 10.10 Interferometric lithography -- Problems -- References.

Text of Note

11. Lithography costs -- 11.1 Cost of ownership -- 11.1.1 Capital costs -- 11.1.2 Consumables -- 11.1.3 Mask costs -- 11.1.4 Rework -- 11.1.5 Metrology -- 11.1.6 Maintenance costs -- 11.1.7 Labor costs -- 11.1.8 Facilities costs -- 11.2 Mix and match strategies -- Problems -- References.

Text of Note

12. Alternative lithography techniques -- 12.1 Proximity x-ray lithography -- 12.2 Extreme ultraviolet lithography - EUV -- 12.3 Electron-beam direct-write lithography -- 12.4 Electron-projection lithography - EPL -- 12.4.1 Small-field EPL systems -- 12.4.2 Large-field EPL systems -- 12.5 Ion-projection lithography - IPL -- 12.6 Imprint lithography -- 12.7 The ultimate future of lithography -- Problems -- References. -- Appendix A. Coherence -- Problems -- References -- Index.

Text of Note

2. Optical pattern formation -- 2.1 The problem of imaging -- 2.2 Aerial images -- 2.3 The contribution of physics and chemistry -- 2.4 Focus -- Problems -- References.

Text of Note

3. Photoresists -- 3.1 Positive and negative resists -- 3.2 Adhesion promotion -- 3.3 Resist spin coating, softbake, and hardbake -- 3.4 Photochemistry of novolak: DNQ g- and i-line resists -- 3.5 Acid-catalyzed DUV resists -- 3.6 Development and post-exposure bakes -- 3.7 Operational characterization -- 3.8 Line edge roughness -- 3.9 Multilayer resist processes -- Problems -- References.

Text of Note

4. Modeling and thin film effects -- 4.1 Models of optical imaging -- 4.2 Aberrations -- 4.3 Modeling photochemical reactions -- 4.4 Thin film optical effects -- 4.5 Post-exposure bakes -- 4.6 Methods for addressing the problems -- of reflective substrates -- 4.7 Development -- Problems -- References.

Text of Note

5. Wafer steppers -- 5.1 Overview -- 5.2 Light sources -- 5.3 Illumination systems -- 5.4 Reduction lenses -- 5.5 Autofocus systems -- 5.6 The wafer stage -- 5.7 Scanning -- 5.8 Dual-stage exposure tools -- Problems -- References.

Text of Note

6. Overlay -- 6.1 Alignment systems -- 6.1.1 Classification of alignment systems -- 6.1.2 Optical methods for alignment and -- wafer-to-reticle referencing -- 6.1.3 Number of alignment marks -- 6.2 Overlay models -- 6.3 Matching -- 6.4 Process-dependent overlay effects -- Problems -- References.

Text of Note

7. Masks and reticles -- 7.1 Overview -- 7.2 Mask blanks -- 7.3 Mechanical optical-pattern generators -- 7.4 Electron beam lithography and mask writers -- 7.5 Optical mask writers -- 7.6 Resists for mask making -- 7.7 Etching -- 7.8 Pellicles -- Problems -- References.

Text of Note

8. Confronting the diffraction limit -- 8.1 Off-axis illumination -- 8.2 Optical proximity effects -- 8.3 The mask error factor -- 8.4 Phase-shifting masks -- Problems -- References.

Text of Note

9. Metrology -- 9.1 Linewidth measurement -- 9.1.1 Linewidth measurement using -- scanning electron microscope -- 9.1.2 Scatterometry -- 9.1.3 Electrical linewidth measurement -- 9.2 Measurement of overlay -- References.

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Text of Note

Lithography is a field in which advances proceed at a swift pace. This book was written to address several needs, and the revisions for the second edition were made with those original objectives in mind. Many new topics have been included in this text commensurate with the progress that has taken place during the past few years, and several subjects are discussed in more detail. This book is intended to serve as an introduction to the science of microlithography for people who are unfamiliar with the subject. Topics directly related to the tools used to manufacture integrated circuits are addressed in depth, including such topics as overlay, the stages of exposure, tools, and light sources. This text also contains numerous references for students who want to investigate particular topics in more detail, and they provide the experienced lithographer with lists of references by topic as well. It is expected that the reader of this book will have a foundation in basic physics and chemistry. No topics will require knowledge of mathematics beyond elementary calculus.

Integrated circuits-- Design and construction.

Microlithography.

Number

Edition

Class number

Book number

Levinson, Harry J.

Date of Transaction

20131122161523.0

Electronic name

[Book]

Y