عنوان
پدید آورنده
موضوع
رده
QC585 .H54 2012eb
QC585
.
H54
2012eb
کتابخانه
محل استقرار
INTERNATIONAL STANDARD BOOK NUMBER
Erroneous ISBN
9783527330324
Erroneous ISBN
9783527646371 (e-book)
NATIONAL BIBLIOGRAPHY NUMBER
Number
dltt
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
High-k gate dielectrics for CMOS technology
General Material Designation
[Book]
First Statement of Responsibility
edited by Gang He and Zhaoqi Sun.
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
Weinheim :
Name of Publisher, Distributor, etc.
Wiley-VCH,
Date of Publication, Distribution, etc.
2012.
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
xxxi, 558 p. :
Other Physical Details
ill. (some col.)
INTERNAL BIBLIOGRAPHIES/INDEXES NOTE
Text of Note
Includes bibliographical references and index.
REPRODUCTION NOTE
Text of Note
Access may be limited to ebrary affiliated libraries.
CONTENTS NOTE
Text of Note
pt. 1. Scaling and challenging of Si-based CMOS -- pt. 2. High-k deposition and materials characterization -- pt. 3. Challenge in interface engineering and electrode -- pt. 4. Development in non-Si-based CMOS technology -- pt. 5. High-k Application in novel devices -- pt. 6. Challenge and directions.
0
TOPICAL NAME USED AS SUBJECT
Dielectrics.
Metal oxide semiconductors, Complementary.
DEWEY DECIMAL CLASSIFICATION
Number
538
.
24
Edition
23
LIBRARY OF CONGRESS CLASSIFICATION
Class number
QC585
Book number
.
H54
2012eb
PERSONAL NAME - ALTERNATIVE RESPONSIBILITY
He, Gang.
Sun, Zhaoqi.
CORPORATE BODY NAME - ALTERNATIVE RESPONSIBILITY
ebrary, Inc.
ELECTRONIC LOCATION AND ACCESS
Electronic name
مطالعه متن کتاب [Book]
Y
