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عنوان
Nonvolatile memory design :
پدید آورنده
Hai Li, Yiran Chen
موضوع
Change of state (Physics)-- Industrial applications,Flash memories (Computers),Magnetic memory (Computers),Nonvolatile random-access memory,Phase change memory,Semiconductor storage devices
رده
TK7895
.
M4
L385
2012
کتابخانه
Center and Library of Islamic Studies in European Languages
محل استقرار
استان:
Qom
ـ شهر:
Qom
تماس با کتابخانه :
32910706
-
025
INTERNATIONAL STANDARD BOOK NUMBER
(Number (ISBN
1439807450 (hbk. : alk. paper)
(Number (ISBN
9781439807453 (hbk. : alk. paper)
NATIONAL BIBLIOGRAPHY NUMBER
Number
b430390
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Nonvolatile memory design :
General Material Designation
[Book]
Other Title Information
magnetic, resistive, and phase change /
First Statement of Responsibility
Hai Li, Yiran Chen
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
Boca Raton, FL :
Name of Publisher, Distributor, etc.
CRC Press,
Date of Publication, Distribution, etc.
c2012
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
xiv, 189 p. :
Other Physical Details
ill. ;
Dimensions
25 cm
INTERNAL BIBLIOGRAPHIES/INDEXES NOTE
Text of Note
Includes bibliographical references and index
TOPICAL NAME USED AS SUBJECT
Change of state (Physics)-- Industrial applications
Flash memories (Computers)
Magnetic memory (Computers)
Nonvolatile random-access memory
Phase change memory
Semiconductor storage devices
DEWEY DECIMAL CLASSIFICATION
Number
004
.
568
Edition
23
LIBRARY OF CONGRESS CLASSIFICATION
Class number
TK7895
.
M4
Class number
TK7895
.
M4
Book number
L385
2012
Book number
L385
2012
PERSONAL NAME - PRIMARY RESPONSIBILITY
Li, Hai,1975-
PERSONAL NAME - ALTERNATIVE RESPONSIBILITY
Chen, Yiran,1976-
ORIGINATING SOURCE
Date of Transaction
20120417144102.0
ELECTRONIC LOCATION AND ACCESS
Electronic name
مطالعه متن کتاب
[Book]
Y
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