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عنوان
Nonvolatile memory design :

پدید آورنده
Hai Li, Yiran Chen

موضوع
Change of state (Physics)-- Industrial applications,Flash memories (Computers),Magnetic memory (Computers),Nonvolatile random-access memory,Phase change memory,Semiconductor storage devices

رده
TK7895
.
M4
L385
2012

کتابخانه
Center and Library of Islamic Studies in European Languages

محل استقرار
استان: Qom ـ شهر: Qom

Center and Library of Islamic Studies in European Languages

تماس با کتابخانه : 32910706-025

INTERNATIONAL STANDARD BOOK NUMBER

(Number (ISBN
1439807450 (hbk. : alk. paper)
(Number (ISBN
9781439807453 (hbk. : alk. paper)

NATIONAL BIBLIOGRAPHY NUMBER

Number
b430390

TITLE AND STATEMENT OF RESPONSIBILITY

Title Proper
Nonvolatile memory design :
General Material Designation
[Book]
Other Title Information
magnetic, resistive, and phase change /
First Statement of Responsibility
Hai Li, Yiran Chen

.PUBLICATION, DISTRIBUTION, ETC

Place of Publication, Distribution, etc.
Boca Raton, FL :
Name of Publisher, Distributor, etc.
CRC Press,
Date of Publication, Distribution, etc.
c2012

PHYSICAL DESCRIPTION

Specific Material Designation and Extent of Item
xiv, 189 p. :
Other Physical Details
ill. ;
Dimensions
25 cm

INTERNAL BIBLIOGRAPHIES/INDEXES NOTE

Text of Note
Includes bibliographical references and index

TOPICAL NAME USED AS SUBJECT

Change of state (Physics)-- Industrial applications
Flash memories (Computers)
Magnetic memory (Computers)
Nonvolatile random-access memory
Phase change memory
Semiconductor storage devices

DEWEY DECIMAL CLASSIFICATION

Number
004
.
568
Edition
23

LIBRARY OF CONGRESS CLASSIFICATION

Class number
TK7895
.
M4
Class number
TK7895
.
M4
Book number
L385
2012
Book number
L385
2012

PERSONAL NAME - PRIMARY RESPONSIBILITY

Li, Hai,1975-

PERSONAL NAME - ALTERNATIVE RESPONSIBILITY

Chen, Yiran,1976-

ORIGINATING SOURCE

Date of Transaction
20120417144102.0

ELECTRONIC LOCATION AND ACCESS

Electronic name
 مطالعه متن کتاب 

[Book]

Y

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