عنوان
پدید آورنده
موضوع
رده
کتابخانه
محل استقرار
INTERNATIONAL STANDARD BOOK NUMBER
(Number (ISBN
9783709169636
NATIONAL BIBLIOGRAPHY NUMBER
Number
b407971
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
The Monte Carlo Method for Semiconductor Device Simulation
General Material Designation
[Book]
First Statement of Responsibility
by Carlo Jacoboni, Paolo Lugli.
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
X, 359 p. :
Other Physical Details
online resource.
SERIES
Series Title
Computational Microelectronics,
ISSN of Series
0179-0307
CONTENTS NOTE
Text of Note
1 Introduction -- References -- 2 Charge Transport in Semiconductors -- 2.1 Electron Dynamics -- 2.2 Energy Bands -- 2.3 Scattering Mechanisms -- 2.4 Scattering Probabilities -- 2.5 Transport Equation -- 2.6 Linear Response and the Relaxation Time Approximation -- 2.7 Diffusion, Noise, and Velocity Autocorrelation Function -- 2.8 Hot Electrons -- 2.9 Transient Transport -- 2.10 The Two-dimensional Electron Gas -- References -- 3 The Monte Carlo Simulation -- 3.1 Fundamentals -- 3.2 Definition of the Physical System -- 3.3 Initial Conditions -- 3.4 The Free Flight, Self Scattering -- 3.5 The Scattering Process -- 3.6 The Choice of the State After Scattering -- 3.7 Collection of Results for Steady-State Phenomena -- 3.8 The Ensemble Monte Carlo (EMC) -- 3.9 Many Particle Effects -- 3.10 Monte Carlo Simulation of the 2DEG -- 3.11 Special Topics -- 3.12 Variance-reducing Techniques -- 3.13 Comparison with Other Techniques -- References -- 4 Review of Semiconductor Devices -- 4.1 Introduction -- 4.2 Historical Evolution of Semiconductor Devices -- 4.3 Physical Basis of Semiconductor Devices -- 4.4 Comparison of Semiconductor Devices -- References -- 5 Monte Carlo Simulation of Semiconductor Devices -- 5.1 Introduction -- 5.2 Geometry of the System -- 5.3 Particle-Mesh Force Calculation -- 5.4 Poisson Solver and Field Distribution -- 5.5 The Monte Carlo Simulation of Semiconductor Devices -- References -- 6 Applications -- 6.1 Introduction -- 6.2 Diodes -- 6.3 MESFET -- 6.4 HEMT and Heterojunction Real Space Transfer Devices -- 6.5 Bipolar Transistor -- 6.6 HBT -- 6.7 MOSFET and MISFET -- 6.8 Hot Electron Transistors -- 6.9 Permeable Base Transistor -- 6.10 Comparison with Traditional Simulators -- References -- Appendix A. Numerical Evaluation of Some Integrals of Interest -- References -- Appendix B. Generation of Random Numbers -- References.
0
SUMMARY OR ABSTRACT
Text of Note
The application of the Monte Carlo method to the simulation of semiconductor devices is presented. A review of the physics of transport in semiconductors is given, followed by an introduction to the physics of semiconductor devices. The Monte Carlo algorithm is discussed in great details, and specific applications to the modelling of semiconductor devices are given. A comparison with traditional simulators is also presented.
OTHER EDITION IN ANOTHER MEDIUM
International Standard Book Number
9783709174531
PIECE
Title
Springer eBooks
TOPICAL NAME USED AS SUBJECT
Computational intelligence.
Computational intelligence.
Computer simulation.
Condensed matter.
Electronic circuits.
Electronics.
Engineering.
Engineering.
Microelectronics.
Circuits and Systems.
Condensed Matter Physics.
Electronics and Microelectronics, Instrumentation.
Simulation and Modeling.
PERSONAL NAME - PRIMARY RESPONSIBILITY
Jacoboni, Carlo
PERSONAL NAME - ALTERNATIVE RESPONSIBILITY
Lugli, Paolo
CORPORATE BODY NAME - ALTERNATIVE RESPONSIBILITY
SpringerLink (Online service)
ORIGINATING SOURCE
Date of Transaction
20160502105600.0
ELECTRONIC LOCATION AND ACCESS
Electronic name
مطالعه متن کتاب [Book]
Y
