عنوان

Neutron-Transmutation-Doped Silicon

(Number (ISBN

9781461332619

(Number (ISBN

9781461332633

Number

b403044

Title Proper

Neutron-Transmutation-Doped Silicon

General Material Designation

[Book]

First Statement of Responsibility

edited by Jens Guldberg.

Place of Publication, Distribution, etc.

Boston, MA :

Name of Publisher, Distributor, etc.

Springer US,

Date of Publication, Distribution, etc.

1981.

Text of Note

1: General Subjects -- Neutron Doped Silicon - A Market Review (Invited) -- Large Scale Production of NTD-Silicon in The United States (Invited) -- 2: Radiation Defects -- Impact of Defects Formed in Neutron Transmutation Doping of Silicon on Device Performance (Invited) -- Electrical Property Studies of Oxygen in Czochralski-Grown Neutron-Transmutation-Doped Silicon (Invited) -- Impurity Interactions with Structural Defects in Irradiated Silicon (Invited) -- Defect Production During Neutron Doping of Si (Invited) -- Wafer Stability. A Comparison of NTD-Silicon with Conventional FZ -- Electron Spin Resonance (ESR) Study on The Thermal Annealing of Defects Induced in Neutron Transmutation Doped Silicon -- Optical Studies of Lattice Damage in Neutron-Transmutation-Doped Silicon -- A Facility and Program at IPNS to Study Defects Produced by Fast Neutrons in Semiconductors -- Defects in Neutron-Irradiated Extrinsic P-Type Silicon -- 3. Irradiation Technology -- The Health and Safety Aspects of Neutron Doped Silicon (Invited) -- Precision and Accuracy of NTD Silicon Production Based on Calorimetric Neutron Dose Control -- The Selection of Starting Material for Neutron-Transmutation Doped Silicon -- The Optimisation of Nuclear Parameters used for Silicon Irradiation in the Harwell Research Reactors -- Factors Affecting Phosphorus Production Rate in NTD Silicon -- Neutron Doped Silicon in Grenoble Reactor Facilities -- Characterization of NTD Silicon Irradiated in Grenoble Reactor Facilities -- A Preliminary Study on NTD-Silicon -- Development of the Irradiation Facilities for Silicon Neutron Doping in France -- Neutron Transmutation Doping of Silicon Slices -- 4. Device Design -- Characterization of Unijunction Transistors Fabricated on NTD-Silicon (Invited) -- NTD Silicon Behaviour During Diffusion Heat Treatment and High Power Devices Optimization (Invited) -- An Optimization of Blocking Characteristics of High Voltage Thyristors using NTD Crystal -- The Fabrication and Characterization of Spreading Resistance Temperature Sensors using NTD Silicon (Invited) -- 5. Characterization -- Characterization of NTD Silicon Crystals by The Photoluminescence Technique (Invited) -- Precision Resistivity Measurements on NTD-Silicon -- Photoluminescence Analysis of NTD-Silicon -- Quantitative Determination of B and P In Silicon by IR Spectroscopy -- 6. Special Topics -- Extrinsic NTD Silicon for Infrared Applications (Invited) -- Impurity Doping and Isolation Processing by High Energy Electron Beam (Invited) -- Application of NTD Silicon for Radiation Detector of Surface Barrier Type -- Neutron Transmutation Doping of GaAs -- Participants.

0

International Standard Book Number

9781461332633

Title

Springer eBooks

Computer engineering.

Engineering.

Guldberg, Jens.

SpringerLink (Online service)

Date of Transaction

20190307160300.0

Electronic name

[Book]

Y