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Properties of advanced semiconductor materials: GaN, AIN, InN, BN, SiC, SiGe
پدید آورنده
موضوع
Semiconductors -- Materials
رده
QC
.
P78
611
2001
کتابخانه
Library of Islamic Azad University, Qom branch
محل استقرار
استان:
Qom
ـ شهر:
Qom
تماس با کتابخانه :
37780014
-
025
LANGUAGE OF THE ITEM
.Language of Text, Soundtrack etc
انگلیسی
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Properties of advanced semiconductor materials: GaN, AIN, InN, BN, SiC, SiGe
EDITION STATEMENT
Statement of Responsibility Relating to Edition
Edited by Michael E. Levinshtein, Sergey L. Rumyantsev, Michael S. Shur
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
New York
Name of Publisher, Distributor, etc.
Wiley
Date of Publication, Distribution, etc.
2001
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
xvii, 194p
GENERAL NOTES PERTAINING TO DESCRIPTIVE INFORMATION
Text of Note
Includes bibliographical references
NOTES PERTAINING TO SUBJECT ACCESS
Text of Note
غیرمرجع
NOTE RELATING TO THE COPY IN HAND
Text of Note
0
TOPICAL NAME USED AS SUBJECT
Entry Element
Semiconductors -- Materials
LIBRARY OF CONGRESS CLASSIFICATION
Class number
QC
Classification Record Number
611
Book number
.
P78
2001
Levinshtein, M. E. )Mikhail Efimovich(
Rumyantsev, Sergey L.
Shur, Michael
LOCATION AND CALL NUMBER
Shelving Form of Title, Author, Author/Title
1
English Book
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