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عنوان
CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies

پدید آورنده
\ Andrei Pavlov, Manoj Sachdev

موضوع
Metal oxide semiconductors, Complementary -- Design. ,Random access memory.,نیمه هادی‌های اکسید فلزی مکمل -- طراحی ,حافظه دسترسی تصادفی

رده
E-Book
,

کتابخانه
Library of Foreign Languages and Islamic Sources

محل استقرار
استان: Qom ـ شهر: Qom

Library of Foreign Languages and Islamic Sources

تماس با کتابخانه : 37839111

INTERNATIONAL STANDARD BOOK NUMBER

(Number (ISBN
:9781402083624

NATIONAL BIBLIOGRAPHY NUMBER

Number
42357

LANGUAGE OF THE ITEM

.Language of Text, Soundtrack etc
انگلیسی

TITLE AND STATEMENT OF RESPONSIBILITY

Title Proper
CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies
General Material Designation
[Electronic book]
Other Title Information
: Process-Aware SRAM Design and Test
First Statement of Responsibility
\ Andrei Pavlov, Manoj Sachdev

.PUBLICATION, DISTRIBUTION, ETC

Place of Publication, Distribution, etc.
[Dordrecht]
Name of Publisher, Distributor, etc.
: Springer
Date of Publication, Distribution, etc.
, 2008

PHYSICAL DESCRIPTION

Specific Material Designation and Extent of Item
xvi, 193 p
Other Physical Details
:ill

SERIES

Series Title
Frontiers in electronic testing
Volume Designation
; 40

INTERNAL BIBLIOGRAPHIES/INDEXES NOTE

Text of Note
Index
Text of Note
Bibliography

TOPICAL NAME USED AS SUBJECT

Metal oxide semiconductors, Complementary -- Design.
Random access memory.
نیمه هادی‌های اکسید فلزی مکمل -- طراحی
حافظه دسترسی تصادفی

LIBRARY OF CONGRESS CLASSIFICATION

E-Book
,

PERSONAL NAME - PRIMARY RESPONSIBILITY

Pavlov, Andrei

PERSONAL NAME - ALTERNATIVE RESPONSIBILITY

Sachdev, Manoj

ELECTRONIC LOCATION AND ACCESS

Date and Hour of Consultation and Access
9781402083624.pdf

BL
278840
1

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