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Process and Device Simulation for MOS-VLSI Circuits
پدید آورنده
موضوع
Integrated circuits -- Very large scale integration -- Simulation methods -- Congresses,Metal oxide semiconductors -- Simulation methods -- Congresses,مدارهای مجتمع -- مجتمعسازی در مقیاس بسیار بزرگ -- شبیهسازی -- کنگره ها,نیمه هادیهای اکسید فلزی -- شبیهسازی -- کنگره ها
رده
E-Book
,
کتابخانه
Library of Foreign Languages and Islamic Sources
محل استقرار
استان:
Qom
ـ شهر:
Qom
تماس با کتابخانه :
37839111
INTERNATIONAL STANDARD BOOK NUMBER
(Number (ISBN
:902472824X
NATIONAL BIBLIOGRAPHY NUMBER
Number
29048
LANGUAGE OF THE ITEM
.Language of Text, Soundtrack etc
انگلیسی
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Process and Device Simulation for MOS-VLSI Circuits
General Material Designation
[electronic resources]
Subsequent Statement of Responsibility
Edited by Paolo Antognetti ... [et.al]
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
, Boston
Name of Publisher, Distributor, etc.
: Martinus Nijhoff Publishers
Date of Publication, Distribution, etc.
, 1983
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
xii, 619p.
Other Physical Details
:ill
SERIES
Series Title
NATO ASI Series Advanced Science Institutes
Volume Designation
; 62
TOPICAL NAME USED AS SUBJECT
Integrated circuits -- Very large scale integration -- Simulation methods -- Congresses
Metal oxide semiconductors -- Simulation methods -- Congresses
مدارهای مجتمع -- مجتمعسازی در مقیاس بسیار بزرگ -- شبیهسازی -- کنگره ها
نیمه هادیهای اکسید فلزی -- شبیهسازی -- کنگره ها
LIBRARY OF CONGRESS CLASSIFICATION
E-Book
,
PERSONAL NAME - ALTERNATIVE RESPONSIBILITY
Antognetti, Paolo
CORPORATE BODY NAME - PRIMARY RESPONSIBILITY
NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits (1982 : Urbino, Italy)
ORIGINATING SOURCE
Country
ایران
ELECTRONIC LOCATION AND ACCESS
Date and Hour of Consultation and Access
902472824X.pdf
BL
279177
1
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