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عنوان
Gas source molecular beam epitaxy: growth and properties of phosphorus containing III-V heterostructures
پدید آورنده
Panish, M.B.
موضوع
، Molecular beam epitaxy,، Gallium arsenide semiconductors
رده
QC
611
.
6
.
M64
P36
1993
کتابخانه
Central Library and Information Center of Ferdowsi University of Mashhad
محل استقرار
استان:
Khorasan Razavi
ـ شهر:
Mashhad
تماس با کتابخانه :
05138806503
OTHER STANDARD IDENTIFIER
Standard Number
51847
Standard Number
53364
TITLE AND STATEMENT OF RESPONSIBILITY
First Statement of Responsibility
Panish, M.B.
Title Proper
Gas source molecular beam epitaxy: growth and properties of phosphorus containing III-V heterostructures
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
Berlin
Name of Publisher, Distributor, etc.
Springer-Verlag
Date of Publication, Distribution, etc.
c1993
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
xiv, 428p.: ill. )some col.(
SERIES
Series Title
Springer series materials sciences; 62
GENERAL NOTES
Text of Note
Bibliography: p. 399-421
Text of Note
Includes index
NOTES PERTAINING TO TITLE AND STATEMENT OF RESPONSIBILITY
Text of Note
M.B. Panish, H. Temkin
TOPICAL NAME USED AS SUBJECT
Entry Element
، Molecular beam epitaxy
Entry Element
، Gallium arsenide semiconductors
LIBRARY OF CONGRESS CLASSIFICATION
Class number
QC
611
.
6
.
M64
P36
1993
PERSONAL NAME - PRIMARY RESPONSIBILITY
Relator Code
AU
AU Temkin, H
TI
SE
LOCATION AND CALL NUMBER
Call Number Suffix
CL
Call Number Suffix
CL
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