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عنوان
Ferroelectric thin films. basic properties and device physics for memory applications
پدید آورنده
Masanori Okuyama, Yoshihiro Ishibashi )eds.(
موضوع
، Thin films,، Ferroelectricity
رده
TA
418
.
9
.
T45
F465
2005
کتابخانه
Library of Razi Metallurgical Research Center
محل استقرار
استان:
Tehran
ـ شهر:
Tehran
تماس با کتابخانه :
46831570
-
021
OTHER STANDARD IDENTIFIER
Standard Number
3117
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Ferroelectric thin films. basic properties and device physics for memory applications
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
Berlin ; New York
Name of Publisher, Distributor, etc.
Springer,
Date of Publication, Distribution, etc.
2005
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
xiii, 244 p. ill. 24 cm.
SERIES
Series Title
Topics in applied physics ;v. 89.
GENERAL NOTES
Text of Note
ISBN: 3540241639
Text of Note
Includes bibliographical references and index.
Text of Note
ng
Text of Note
Publisher description http://www.loc.gov/catdir/enhancements/fy0663/2004117860-d.html
Text of Note
Table of contents only http://www.loc.gov/catdir/enhancements/fy0823/2004117860-t.html
NOTES PERTAINING TO TITLE AND STATEMENT OF RESPONSIBILITY
Text of Note
Masanori Okuyama, Yoshihiro Ishibashi )eds.(
TOPICAL NAME USED AS SUBJECT
Entry Element
، Thin films
Entry Element
، Ferroelectricity
DEWEY DECIMAL CLASSIFICATION
Number
box1
LIBRARY OF CONGRESS CLASSIFICATION
Class number
TA
418
.
9
.
T45
F465
2005
PERSONAL NAME - PRIMARY RESPONSIBILITY
Relator Code
TI
AU Okuyama, Masanori,1946-
AU Ishibashi, Yoshihiro.
LOCATION AND CALL NUMBER
Call Number Suffix
1
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