عنوان
پدید آورنده
موضوع
رده
TK7871.95
TK7871
.
95
کتابخانه
محل استقرار
OTHER STANDARD IDENTIFIER
Standard Number
2147
TITLE AND STATEMENT OF RESPONSIBILITY
First Statement of Responsibility
Franco, Jacopo
author
Title Proper
Reliability of high mobility SiGe channel MOSFETs for future CMOS applications
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
1 online resource )xix, 187 pages( : illustrations
SERIES
Series Title
Springer Series in Advanced Microelectronics,7341-7830 ;volume 74
GENERAL NOTES
Text of Note
Includes bibliographical references
CONTENTS NOTE
Text of Note
Degradation mechanisms -- Techniques and devices -- Negative Bias Temperature Instability in )Si(Ge pMOSFETs -- Negative Bias Temperature Instability in nanoscale devices -- Channel Hot Carriers and other reliability mechanisms -- Conclusions and perspectives
TOPICAL NAME USED AS SUBJECT
Entry Element
Reliability ، Metal oxide semiconductor field-effect transistors
Entry Element
Reliability ، Metal oxide semiconductors, Complementary
Entry Element
، Physics
Entry Element
، Semiconductors
Entry Element
، Circuits and Systems
Entry Element
، Optical and Electronic Materials
Entry Element
، Electronic Circuits and Devices
DEWEY DECIMAL CLASSIFICATION
Number
621
.
3815284
LIBRARY OF CONGRESS CLASSIFICATION
Class number
TK7871
.
95
PERSONAL NAME - PRIMARY RESPONSIBILITY
Relator Code
AU
Entry Element
Jacopo Franco, Ben Kaczer, Guido Groeseneken
AU neB ,rezcaK author
AU odiuG ,nekeneseorG author
TI
SE
SE Springer series in advanced microelectronics ;
LOCATION AND CALL NUMBER
Shelving Form of Title, Author, Author/Title
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