عنوان
پدید آورنده
موضوع
رده
TA418.9.N35
TA418
.
9
.
N35
کتابخانه
محل استقرار
OTHER STANDARD IDENTIFIER
Standard Number
2147
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Nanowire field effect transistorsprinciples and applications
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
New York
Name of Publisher, Distributor, etc.
Springer
Date of Publication, Distribution, etc.
2014
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
1 online resource )292 p.(
CONTENTS NOTE
Text of Note
Quantum Wire and Sub-Bands -- Carrier Concentration and Transport -- P-N Junction Diode: I-V Behavior and Applications -- Silicon Nanowire Field Effect Transistor -- Fabrication of Nanowires and their Applications -- Characterization of Nanowire Devices under Electrostatic Discharge Stress Conditions -- Green Energy Devices -- Nanowire Field Effect Transistors in Optoelectronics -- Nanowire BioFETs: An Overview -- Lab On a Wire: Application of Silicon Nanowires for Nanoscience and Biotechnology -- Nanowire FET Circuit Design : An Overview
TOPICAL NAME USED AS SUBJECT
Entry Element
، Field-effect transistors
Entry Element
، Nanostructured materials
Entry Element
، Nanostructured materials
Entry Element
، Nanostructures
Entry Element
، Nanotechnology
Entry Element
، Nanotubes
DEWEY DECIMAL CLASSIFICATION
Number
620
.
5
621
.
3815284
LIBRARY OF CONGRESS CLASSIFICATION
Class number
TA418
.
9
.
N35
PERSONAL NAME - PRIMARY RESPONSIBILITY
Relator Code
TI
Entry Element
Dae Mann Kim, Yoon-Ha Jeong, editors
AU nnaM eaD ,miK
AU aH-nooY ,gnoeJ
LOCATION AND CALL NUMBER
Shelving Form of Title, Author, Author/Title
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