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ورود / ثبت نام
عنوان
Nanoscale transistors: device physics, modeling and simulation
پدید آورنده
Lundstrom, Mark
موضوع
، Nanotechnology,، Metal oxide semiconductor field-effect transistors-- Mathematical models,، Nanostructured materials-- Mathematical models
رده
T
174
.
7
.
L86
2006
کتابخانه
Central Library of Sharif University of Technology
محل استقرار
استان:
Tehran
ـ شهر:
Tehran
تماس با کتابخانه :
66005817
-
021
OTHER STANDARD IDENTIFIER
Standard Number
140557
LANGUAGE OF THE ITEM
.Language of Text, Soundtrack etc
بهار۵۸
.Language of Text, Soundtrack etc
English
TITLE AND STATEMENT OF RESPONSIBILITY
General Material Designation
)12(
First Statement of Responsibility
Lundstrom, Mark
Title Proper
Nanoscale transistors: device physics, modeling and simulation
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
New York
Name of Publisher, Distributor, etc.
Springer
Date of Publication, Distribution, etc.
2006
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
vi, 217 p.: ill.; 24 cm
GENERAL NOTES
Text of Note
Includes bibliographical references and index
TOPICAL NAME USED AS SUBJECT
Entry Element
، Nanotechnology
Entry Element
، Metal oxide semiconductor field-effect transistors-- Mathematical models
Entry Element
، Nanostructured materials-- Mathematical models
LIBRARY OF CONGRESS CLASSIFICATION
Class number
T
174
.
7
.
L86
2006
PERSONAL NAME - PRIMARY RESPONSIBILITY
Relator Code
AU
Entry Element
Mark S. Lundstrom, Jing Guo
AU gniJ ,ouG 1977-
TI
LOCATION AND CALL NUMBER
Shelving Form of Title, Author, Author/Title
131
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