عنوان
پدید آورنده
موضوع
رده
QC 612 .S4 .W5
QC
612
.
S4
.
W5
کتابخانه
محل استقرار
OTHER STANDARD IDENTIFIER
Standard Number
26160
Standard Number
26106
Standard Number
33266
Standard Number
35391
Standard Number
37221
Standard Number
74127
Standard Number
85159
Standard Number
120073
LANGUAGE OF THE ITEM
.Language of Text, Soundtrack etc
تابستان۰۸
.Language of Text, Soundtrack etc
English
TITLE AND STATEMENT OF RESPONSIBILITY
General Material Designation
)50-70(
First Statement of Responsibility
Willardson, Robert K.
Title Proper
Semiconductors and semimetals
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
New York
Name of Publisher, Distributor, etc.
Academic Press
Date of Publication, Distribution, etc.
]1966-
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
v.: ill.; 24 cm
GENERAL NOTES
Text of Note
Bibliographical footnotes and indexes
CONTENTS NOTE
Text of Note
v.1-2. Physics of III-V compounds.- v.3. Optical properties of III-V compounds.- v.4. Physics of III-V compounds.- v.5. Infrared detectors.- v.6. Injection phenomena.- v.7. Appliations and devices. 2 pts.- v.8. Transport and optical phenomena.- v.9. Modulation techniques.- v.01. Transport phenomena.- v.11. Solar cells.- v.21. Infrared detectors II.--v.31. Cadmium telluride.--v.41. Lasers, junctions, transport.-- v.51. Contacts, junctions, emitters.-- v.61. Defects, )HgCd( Se, )HgCd(Te.-- v.71. CW beam processing of Silicon and other semiconductors.-- v.81. Mercury, cadmium, telluride.-- v.91. Deep levels, GaAs, alloys, photochemistry.-- v.02. Semi-insulating GaAs.-- v.12. Hydrogenated amorphus silicon.- pt.A. Preparation and structure. pt.B. Optical properties.- pt.C. Electronic and transport properties.- pt.D. Device applications.-- v.22. Lightwave communications technology.- pt.A. Material growth technologies.- pt.B. Semiconductor injection lasers I.- pt.C. Semiconductor injection lasers II. Light-emitting diodes.- pt.D. Photodetectors.- v.32. Pulsed laser processing of semiconductors.-- v.42. Applications of multiquatum wells, selective doping, and superlattices.-- v.52. Diluted magnetic semiconductors.-- v.62. III-V compound semicondutors and semciondoctor properties of superionic materials.-- v.72. Highly conducting quasi-one-dimensional organic crystals.-- v.82. Measurement of high-speed signals in solid state devices.-- v.92. Very high speed integrated circuits: Gallium Arsenide LSI.-- v.03. Very highe speed integrated circuits: heterostructure.-- v.13. Indium phosphide: crystal growth and characterization.-- v.23-43. Semiconductors and semimetals.-- v.54. Effect of disorder and defects in ion-implanted semiconductors: electrical and physicochemical characterization
TOPICAL NAME USED AS SUBJECT
Entry Element
، Semiconductors
Entry Element
، Semimetals
LIBRARY OF CONGRESS CLASSIFICATION
Class number
QC
612
.
S4
.
W5
PERSONAL NAME - PRIMARY RESPONSIBILITY
Relator Code
AU
Entry Element
Edited by R.K. Willardson ]and[ Albert C. Beer
AU .C treblA ,reeB
TI Effect of disorder and defects in ion-implanted semiconductors: electrical and physicochemical characterization
TI
LOCATION AND CALL NUMBER
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