Electronic properties of multilayers and low-dimensional semiconductor structures
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
New York
Name of Publisher, Distributor, etc.
Plenum Press
Date of Publication, Distribution, etc.
1990
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
xiii, 477 p. : ill. ; 26 cm
SERIES
Series Title
NATO ASI series. Series B, Physics, vol. 132
GENERAL NOTES
Text of Note
Proceedings of a NATO Advanced Study Institute on Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures, held Sept. 11-22, 1989, at Chعateau de Bonas, Castعera-Verduzan, France
Text of Note
"Published in cooperation with NATO Scientific Affairs Division."
Text of Note
Includes bibliographical references and index
TOPICAL NAME USED AS SUBJECT
Entry Element
، Semiconductors-- Congresses
Entry Element
، Layer structure )Solids(-- Congresses
Entry Element
، Tunneling )Physics(-- Congresses
Entry Element
، Superlattices as materials-- Congresses
LIBRARY OF CONGRESS CLASSIFICATION
Class number
QC
610
.
9
.
N3644
1989
PERSONAL NAME - PRIMARY RESPONSIBILITY
Relator Code
AU
Entry Element
edited by J.M. Chamberlain and L. Eaves and J.-C. Portal
AU .M .J ,nialrebmahC
AU .L ,sevaE
AU .C .J ,latroP
TI
SE NATO ASI series, Physics, v. 231
CORPORATE BODY NAME - SECONDARY RESPONSIBILITY
Entry Element
NATO Advanced Study Institute on Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures, )1989, Castera-Verduzan, France(