عنوان
پدید آورنده
موضوع
رده
{1648},af9351224c7c015c790e175861b0fc60
{
1648
},
af9351224c7c015c790e175861b0fc60
کتابخانه
محل استقرار
English Book
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Properties of advanced semiconductor materials:GaN, AlN, InN, BN, SiC, SiGe
First Statement of Responsibility
edited by Michael E. Levinshtein, Sergey L. Rumyantsev, Michael S. Shur
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
New York
Name of Publisher, Distributor, etc.
Wiley
Date of Publication, Distribution, etc.
2001
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
xvii, 194 p. ill
SUMMARY OR ABSTRACT
Text of Note
Includes bibliographical references
TOPICAL NAME USED AS SUBJECT
Entry Element
Semiconductors--Materials
