عنوان
پدید آورنده
موضوع
رده
T،174.7،.L86،2006
T
،
174
.
7
،.
L86
،
2006
کتابخانه
محل استقرار
English Book
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Nanoscale Transistors: Device physics, modeling and simulation
First Statement of Responsibility
Mark S. Lundstrom, Jing Guo
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
New York
Name of Publisher, Distributor, etc.
Springer
Date of Publication, Distribution, etc.
c2006
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
vi, 217 p.: ill.; 24cm
INTERNAL BIBLIOGRAPHIES/INDEXES NOTE
Text of Note
Includes bibliographical references and index
TOPICAL NAME USED AS SUBJECT
Entry Element
Metal oxide Semiconductor field-effect
Entry Element
Transistors -- Mathematical models
Entry Element
Nanostructured materials - Mathematical models
Entry Element
Nanotechnology
LIBRARY OF CONGRESS CLASSIFICATION
Class number
T
Book number
174
.
7
Classification Record Number
.
L86
2006
PERSONAL NAME - PRIMARY RESPONSIBILITY
Entry Element
Lundstrom, Mark
PERSONAL NAME - SECONDARY RESPONSIBILITY
Entry Element
Guo, Jing, 1977
