/ edited by Mikhail Baklanov, Martin Green, and Karen Maex
Chichester, England ;Hoboken, NJ
: John Wiley & Sons,
, c2007.
xxii, 486 p. , ill. , 26 cm.
(Wiley series in materials for electronic and optoelectronic applications)
Electronic
Includes bibliographical references and index.
Low and ultralow dielectric constant films prepared by plasma-enhanced chemical vapor deposition /A. Grill --Spin-on dielectric materials /Geraud Dubois, Robert D. Miller, Willi Volksen --Positron annihilation spectroscopy /David W. Gidley, Hua-Gen Peng, Richard Vallery --Structure characterization of nanoporous interlevel dielectric thin films with-ray and neutron radiation /Christopher L. Soles ... [et al.] --Ellipsometric porosimetry /Mikhail R. Baklanov --Mechanical and transport properties of low-k dielectrics /J. L. Plawsky ... [et al.] --Integration of low-k dielectric films in damascene processes /R. J. O. M. Hoofman ... [et al.] --ONO structures and oxynitrides in modern microelectronics : material science, characterization and application /Yakov Roizin, Vladimir Gritsenko --Material engineering of high-k gate dielectrics /Akira Toriumi, Koji Kita --Physical characterization of ultra-thin high-k dielectric /T. Conard, H. Bender, W. Vandervorst --Electrical characterization of advanced gate dielectrics /Robin Degraeve ... [et al.] --Integration issues of high-k gate dielectrics /Yasuo Nara --Anisotropic conductive film (ACF) for advanced microelectronic interconnects /Yi Li, C. P. Wong.