عنوان
پدید آورنده
موضوع
رده
QC 611 .8 .D66 S5513
QC
611
.
8
.
D66
S5513
کتابخانه
محل استقرار
Electronic properties of doped semiconductors
Berlin; New York
Springer-Verlag
c1984
xii, 388 p. : ill
Springer series in solid-state sciences
45
Translation of: Elektronnye svoistva legirovannykh poluprovodnikov
Includes bibliographical references and index
B.I. Shklovskii, A.L. Efros
1
Elektronnye svoistva legirovannykh poluprovodnikov. English
، Doped semiconductors
، Electron-electron interactions
، Hopping conduction
، Materials at low temperatures
QC
611
.
8
.
D66
S5513
4491-
Shklovskii, Boris Isaakovich
AU
AU Efros, Aleksei Lvovich 1938-
TI
