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TLpq2466316210
انگلیسی
The Cleaning and Passivation of Germanium X-Ray Photodiodes
[Thesis]
Garafalo, Anne
Hunt, Charles E.
University of California, Davis
2020
51
M.S.
University of California, Davis
2020
For high performance Ge x-ray photodiodes, it is vital that the quality Ge interfacial layer is examined, as the type of layer, cleaning method, and deposition method used have a large impact on the performance of the devices. In this study Ge surfaces and mesas were cleaned with UV Ozone, thermal annealing, and cyclic HCl etches. Next Hf3N4 was deposited using atomic layer deposition, onto the surfaces of Ge photodiodes and MIS capacitors to form the passivation layers and compared to polyimide passivated photodiodes. AFM measurements allow for comparing the RMS roughness of the germanium surfaces with different cleaning methods. XPS measurements indicate which cleaning methods are most effective at removing germanium oxides and organic species from the surface. Taking voltage versus current measurements allow for comparing the dark current, breakdown voltage and ideality factor of a Hf3N4 passivated germanium photodiode with a polyimide passivated germanium photodiode. The interface trap density is calculated from the conductance method by measuring the capacitance versus voltage of Hf3N4 passivated germanium MIS capacitors.
Electrical engineering
Materials science
Garafalo, Anne
Hunt, Charles E.
مطالعه متن کتاب p
[Thesis]
276903
a
Y
