عنوان

Matching properties of deep sub-micron MOS transistors /

0387243135

0387243143

6610612064

9780387243139

9780387243146

9786610612062

b744036

Matching properties of deep sub-micron MOS transistors /

[Book]

by Jeroen A. Croon, Willy Sansen and Herman E. Maes.

New York :

Springer,

2005.

1 online resource (x, 206 pages) :

illustrations

The Kluwer international series in engineering and computer science,

851

0893-3405 ;

Includes bibliographical references (pages 193-203).

Introduction: Matching analysis. Importance for circuit design. State of the art. Research objectives. Outline of this book -- Measurement and Modeling of Mismatch. Measurement setup. Experimental setup. Modeling of mismatch in the drain current. Width and length dependence. Example: Yield of a current-steering D/A converter. Conclusions -- Parameter Extraction. Extraction methods. Experimental setup. Comparison of extraction methods. Future issues. Conclusions -- Physical Origins of Mosfet Mismatch. Basic operation of the MOS transistor. Mismatch in the drain current. Physical origins of fluctuations. Conclusions -- Technological Aspects. Technology descriptions. Impact of the gate. Impact of the halo implantation. Comparison of di®erent CMOS technologies. Alternative device concepts. Conclusions -- Impact of Line-Edge Roughness. Characterization of line-edge roughness. Modeling the impact of line-width roughness. Experimental investigation of the impact of LWR. Prediction of the impact of LWR and guidelines. Conclusions -- Conclusions, Future Work and Outlook. Conclusions. Future work -- Outlook.

0

"Matching Properties of Deep Sub-Micron MOS Transistors examines the matching properties of deep sub-micron MOS transistors. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions transistor mismatch has an increasing impact on digital circuits." "Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET."--Jacket.

Springer

978-0-387-24314-6

Matching properties of deep sub-micron MOS transistors.

9780387243146

Metal oxide semiconductor field-effect transistors.

Ingénierie.

Metal oxide semiconductor field-effect transistors.

Metal oxide semiconductor field-effect transistors.

TECHNOLOGY & ENGINEERING-- Electronics-- Transistors.

TEC-- 008110

TJFC.

TK

Croon, Jeroen A.

Maes, H. E., (Herman E.)

Sansen, Willy M. C.

20201204043013.0

pn

[Book]

Y