عنوان

GaN-based materials and devices :

1281347620

9781281347626

9789812562364

9812562362

9812388443

b722546

GaN-based materials and devices :

[Book]

growth, fabrication, characterization and performance /

editors M.S. Shur, R.F. Davis.

London :

World Scientific.,

©2004.

1 online resource (x, 284 pages) :

illustrations.

Selected topics in electronics and systems ;

vol. 33

Includes bibliographical references.

The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AIN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property. This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.

GaN-based materials and devices.

9812388443

Gallium nitride.

Semiconductors-- Materials.

Gallium nitride.

Gallium nitride.

Semiconductors-- Materials.

Semiconductors-- Materials.

TECHNOLOGY & ENGINEERING-- Electronics-- Semiconductors.

TECHNOLOGY & ENGINEERING-- Electronics-- Solid State.

PHK

TEC-- 008090

TEC-- 008100

Davis, Robert F., (Robert Foster),1942-

Shur, Michael.

20201208142248.0

pn

[Book]

Y