عنوان

Electrical properties of indium arsenide nanowires and their field-effect transistors /

9789811334443

9811334447

9789811334436

9811334439

Electrical properties of indium arsenide nanowires and their field-effect transistors /

[Book]

Mengqi Fu.

Singapore :

Springer,

[2018]

1 online resource

Springer theses

"Doctoral thesis accepted by the Peking University, Beijing, China."

Includes bibliographical references.

Intro; Supervisor's Foreword; Abstract; Parts of this thesis have been published in the following journal articles:; Acknowledgements; Contents; 1 Introduction; 1.1 Advantages of InAs Nanowire-Based Electronic Devices; 1.1.1 Advantages of InAs Material for Fabricating High-Performance Electronic Devices; 1.1.2 Advantages of InAs Nanowires in Making Multi-gate and Gate-All-Around Devices; 1.2 Crystal Structure of InAs Nanowires; 1.3 Development Status of InAs Nanowire Electronic Devices; 1.3.1 InAs Nanowire MOSFETs; 1.3.2 InAs Nanowire TFETs

1.4 Several Problems of InAs Nanowire-Based Electronic Devices1.4.1 High OFF-State Current of Devices; 1.4.2 Interface State Between InAs Nanowires and Gate Dielectric; 1.4.3 Relation Between Structure of InAs Nanowires and Their Device Performance; 1.4.4 Dispersion of Device Performance; 1.5 Topic Ideas and Chapter Arrangements; References; 2 Fabrication, Characterization and Parameter Extraction of InAs Nanowire-Based Device; 2.1 Growth of InAs Nanowires; 2.2 Characterization, Device Fabricating and Electrical Measurement Equipment of Nanowires; 2.2.1 Characterization Equipment

2.2.2 Apparatus for Device Fabrication2.2.3 Apparatus to Characterize the Electrical Properties of Devices; 2.3 Fabrication Processes of InAs Nanowires Devices; 2.3.1 Dispersion and Transfer of InAs Nanowires; 2.3.2 General Fabrication Process for Planar InAs Nanowire Devices; 2.3.3 Fabrication Process for Suspended InAs Nanowire Devices; 2.4 Measurement and Characterization of InAs Nanowire Devices; 2.5 Extraction of Basic Electrical Parameters of InAs Nanowires Based on FETs; References; 3 The Impact of Quantum Confinement Effects on Electrical Properties of InAs Nanowires

3.1 Growth of Ultrathin InAs Nanowire3.2 High-Performance Device Based on Ultrathin InAs Nanowires; 3.3 Influences of Diameter on the InAs Nanowire Devices; 3.3.1 Influences of Diameter on the OFF-State Performance of InAs Nanowire Devices; 3.3.2 Larger Bandgap Induced by Smaller Diameter of InAs Nanowires; 3.3.3 Influence of Diameter on ON-State Performance of InAs Nanowire Devices; 3.4 Summary; References; 4 Influence of Crystal Phase and Orientation on Electrical Properties of InAs Nanowires; 4.1 Growth of InAs Nanowires in Different Orientations

4.2 Method of Transferring Nanowires in Devices to TEM for Structural Characterization4.3 Determination of the Crystal Orientation; 4.4 Influence of Crystal Phase and Orientation on the Electrical Transport Properties of InAs Nanowires at Room Temperature; 4.4.1 Comparison of Device Performance with Different Crystal Structure; 4.4.2 Statistical Analysis on Device Parameters; 4.5 Influence of Crystal Phase and Crystal Orientation of InAs Nanowires on Electrical Transport Properties at Low Temperature

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This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.

Springer Nature

com.springer.onix.9789811334443

Electrical properties of indium arsenide nanowires and their field-effect transistors.

9789811334436

Field-effect transistors.

Nanowires.

Field-effect transistors.

Nanowires.

SCI050000

TBN

TBN

Fu, Mengqi.

20200823234405.0

pn

[Book]

Y