عنوان

Compound semiconductors 2004 :

1420034561

9781420034561

9780750310178

Compound semiconductors 2004 :

[Book]

proceedings of the thirty-first International Symposium on Compound Semiconductors held in Seoul, Korea, 12-16 September 2004 /

edited by Jong-Chun Woo [and four others].

Boca Raton, FL :

CRC Press, Taylor & Francis Group,

2018.

1 online resource.

Institute of Physics conference series ;

number 184

First published 2005 by IOP Publishing Ltd.

Includes bibliographical references and index.

Cover -- Half Title -- Title Page -- Copyright Page -- International Symposium on Compound Semiconductors (ISCS) Heinrich Welker Award -- ISCS Quantum Devices Award -- Young Scientist Award -- Preface -- ISCS 2004 Symposium Committees -- Acknowledgments -- Contents -- Section 1: Nanostructure electronic and optoelectronic devices -- A Lagrangian Approach to Wavefunction Engineering of Layered Quantum Semiconductor Structures -- Dependence of Band-Offset on Sb content in AlGaAs/ GaAsSb Quantum Wells Grown on GaAs by MBE -- Band Alignment Analysis of Strained GaAsSb/InGaAs Quantum Wells -- Fabrication of Self-Assembled Nanodots at Arbitrary Locations by Spatially Controlled Implant Source Growth -- Anomalous Current Leakage and Depletion Width Control in Nanometer Scale Schottky Gates Formed on AlGaAs/GaAs Surface -- Nonlinear Variable Capacitance Characteristics in GaInP/GaAs Triple Barrier Resonant Tunneling Diodes -- Single electron transistors using single self-assembled InAs quantum dots -- 70 nm InGaAs/InAlAs/GaAs Metamorphic HEMTs for High Frequency Applications -- Two-stage high gain W-band amplifier using metamorphic HEMT technology -- Improved Breakdown Voltage and Output Conductance Characteristics of GaAs pHEMTs using Composite Gate fabricated by Digital Recess Method -- High performance 0.1 pm GaAs PHEMT with Si pulse doped cap layer for 77GHz car radar -- Development of a Highly-Reliable Over 200 W GaN-HEMT Power Amplifier -- High Speed InP HBT Driver IC for Laser Modulations -- (GaIn)(NAsSb): The Challenges for Long Wavelength Communications Devices -- Ultra-high speed internal RF-gain InGaAs/InAlAs avalanche photodetector -- Very high sensitivity operation in quantum dot infrared photodetectors -- RF-enhanced InGaAs/InAlAs uni-traveling-carrier photodetector.

Force/displacement Detection using Quantum Effects in InAs/Al0.5Ga0.5Sb Two-dimensional Electron Systems -- Self-Consistent Analysis of Electron Transport Properties in Quantum Wires -- Insulator-quantum Hall transitions in a two-dimensional electron gas using self-assembled InAs dots -- Excitonic diamagnetic shift and oscillating Zeeman splitting in quantum wire: Magneto-photoluminescence study -- AlGaAs/InGaAs PHEMT with Multiple Quantum Wire Channels -- 20 Gbps operation of RTD/HBT MOBILE (MOnostable Bistable Logic Element) IC based on an InP technology -- Speed-Power Performances of Quantum Wire Switches Controlled by Nanometer-Scale Schottky Wrap Gates for GaAs based Hexagonal BDD Quantum LSIs -- FDTD Analysis of the Self-aligned Total Internal Reflection Mirrors for Micro-Ring Cavity Resonators -- 40Gbps Waveguide Photodiode with Responsivity more than 1.0A/W, Large Alignment Tolerance, and High Saturation Current -- Section 4: Wide and narrow gap materials and bandgap engineering -- The Crystal Growth of GaN on MOCVD-Deposited GaN by the Method of Sublimation -- Surface morphologies of AlGaN films and AlGaN/GaN heterostructures on vicinal sapphire (0001) substrates grown by rf-MBE -- Growth and Characterization of High In Composition InGaN epilayers by rf-MBE -- Cubic InN Growth on R-plane (1012) Sapphire by ECR-MBE -- AlGaN/GaN Hetero-structure on GaN Templates with High Al Composition and Low resistance by RF-MBE -- High Quality AlGaN/AlN Superlattices grown on AIN/Sapphire Template by MOVPE -- Effect of Si doping to the (1-101)GaN grown on a 7 degree off oriented (001)Si by selective MOVPE -- Defect control in Ga(In)NAs films grown by atomic H assisted RF-MBE -- Electrical properties in hexagonal InN thin films -- Optical Phonon Dephasing Channels in GaN revealed by the Coherent Phonon Method.

Growth and Characterization of HVPE GaN on c-sapphire with CrN Buffer Layer -- Doping of GaN, AlGaN by mixed-source HVPE -- Investigation of thermal degradation on structural and optical qualities of InGaN/InGaNMQWs -- Low threshold current GalnNAs QW LD with InGaAs/GaNAs barriers -- The effect of surface treatment on Zinc Oxide -- Photoluminescence study of ZnO thin films deposited by pulsed laser ablation -- Photoluminescence from Single Hexagonal Nano-Wire Grown by Selective Area MOVPE -- Diluted Semiconductors Formed from Energetic Beams -- A New GaAs MOS Varactor Fabricated Using a Low-Cost GaAs Oxidation Technology -- Section 6: Characterization -- Measurements for nanocrystals in silicon deposited by rf-magnetron sputtering -- Structure Properties and Phase Evolution of MgxZn1-xO Layers Grown on c-sapphire by P-MBE -- Bi-induced phonons in GaAs1-xBix -- Temporal Behavior of Absorption Changes and Yellow Luminescence in Thin InGaN Epilayers -- High-energy photoemission studies of transition metal ion doped III-V nitrides -- Strain effect on energy band of InAs/InP quantum dots by GaAs layer insertion -- Electron-Hole Separation in InAs Quantum Dots -- Spin relaxation in charged InAs/GaAs quantum dots -- Anti-parallel spin interaction between the carriers in coupled quantum dots -- Raman study of biaxial strain in InGaN-GaN self-assembled quantum dots grown on sapphire (0001) -- Optical properties of II-VI-based magnetic semiconductor self-assembled quantum dots -- Interpretation of Leakage Current in Ni/n-(Al)GaN Schottky Structures and Its Influence on Surface Preparation Conditions -- An analysis of the kink phenomena at lower drain current in GaAs-based short-gate MHEMTs using the hydrodynamic transport simulation -- Demonstration of the formation of GaAs homojunction far-infrared detection by reflection measurements.

Performance enhancement by using the n+-GaN cap layer and gate recess technology on the AlGaN/GaN HEMTs fabrication -- Electron Traps in AlGaN/GaN MIS-HEMTs Observed by Drain Current DLTS -- Surface potential transient of AlGaN/GaN HEMTs measured by Kelvin probe force microscopy -- AlGaN/GaN MIS-HEMTs with ZrO2 Gate Insulator -- Self-heating Effect Study of AlGaN/GaN HEMT using Pulsed IVT on the Isothermal Conditions -- Power performance enhancement of metamorphic In0.3Al0.7As/In0.45Ga0.55 As HEMTs using pseudomorphic channel design -- Highly Reflective and Crack-free Si-doped AlN/GaN Distributed Bragg Reflectors Grown on 6H-SiC(0001) by Molecular Beam Epitaxy -- High Power InGaN/GaN Flip-Chip Blue and White LED -- High power AlInGaN-based multi-quantum well laser diode with low operating current -- Crack-free ZnO layer growth on glass substrates by MgO-buffer layer -- Effect of ambient gases on structural and optical characteristics of post annealed ZnO films -- Activation of group-I acceptors by hydrogen codoping in ZnO -- Optical properties of cubic MgZnO thin films -- Parameters required to simulate electric characteristics of SiC devices -- Enhancement of ionization efficiency of acceptors by their excited states in heavily doped wide bandgap semiconductors -- High Extraction Efficiency Light-Emitting-Diodes using Hemispherical Corrugated Interface Substrate -- Transconductance Linearity Improvement of E-pHEMT at High Vgs -- Section 5: Epitaxy and Processing -- First-principles investigations of Ga and As adsorption properties on a GaAs(110) surface -- Development of plasma-free etch chemistry to realize defect-free GaAs micromechanical resonator structures -- Patterned InGaAs Quantum Dots by Selective Area MOCVD -- Growth of AlGaN on Al2O3 substrates by mixed-source HVPE -- CrN Buffer Layer Study For GaN Growth Using Molecular Beam Epitaxy(MBE).

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Compound semiconductors, Congresses.

Semiconductors-- Materials, Congresses.

Compound semiconductors.

Semiconductors-- Materials.

TECHNOLOGY & ENGINEERING / Mechanical.

TEC-- 009070

Woo, Jong-Chun

International Symposium on Compound Semiconductors(31st :2004 :, Seoul, Korea)

20200822124940.0

pn

[Book]

Y