"Doctoral Thesis accepted by Pennsylvania State University, State College, PA, USA."
Includes bibliographical references.
Intro; Supervisor's Foreword; Preface; Acknowledgments; Contents; Chapter 1: Two-Dimensional Materials; 1.1 Introduction; 1.2 Classification and Thermal Stability; 1.3 Graphene: The Beginning of 2D Materials Research; 1.4 Monolayer Transition Metal Dichalcogenides: Real 2D Semiconductors; 1.5 2D Materials as the Building Blocks for vdW Heterostructures; 1.5.1 Making vdW Heterostructures via Stacking Exfoliated 2D Layers; 1.5.2 Applications of vdW Heterostructures for Electrical and Optical Devices; 1.5.3 Interfacial Imperfection; References.
2.6.1 Scalable Process for Synthetic 2D SemiconductorsReferences; Chapter 3: Properties of Atomically Thin WSe2 Grown Via Metal-Organic Chemical Vapor Deposition; 3.1 Impact of Growth Conditions and Substrates on Properties of WSe2; 3.1.1 Introduction; 3.1.2 Experimental Methods; Material Synthesis; Materials Characterization; Device Fabrication and Tunneling Current Measurements; 3.1.3 Results and Discussion; 3.1.4 Conclusions for Sect. 3.1; 3.2 Toward Large-Area and Epitaxy-Grade WSe2; 3.2.1 Introduction; 3.2.2 Experimental Methods; Materials Characterization.
Chapter 2: Synthesis and Properties of 2D Semiconductors2.1 Introduction; 2.2 Molecular Absorption and Desorption Process During Thin-Film Deposition; 2.2.1 Nucleation and Growth; 2.2.2 Epitaxial Relationship Between Deposited Materials and Substrates; 2.3 Synthesis Techniques for 2D TMDC; 2.3.1 Powder Vaporization; 2.3.2 Metal-Organic Chemical Vapor Deposition; 2.3.3 Epitaxial Graphene Synthesis; 2.4 Vertical and Radical Heterostructures Based on Synthetic 2D Materials; 2.5 2D Materials Electronics: Interface Is Critical; 2.6 2D Semiconductors for Low-Power Electronic Applications.
Chapter 5: Atomically Thin Heterostructures Based on Monolayer WSe2 and Graphene5.1 Introduction; 5.2 Experimental Methods; 5.2.1 Growth and Properties of WSe2 Layers on Graphene; 5.2.2 Diode Fabrication; 5.2.3 LEEM for Assessment of the Graphene Layer Thickness; 5.3 Results and Discussion; 5.4 Conclusions; References; Chapter 6: Tuning Electronic Transport in WSe2-Graphene; 6.1 Introduction; 6.2 Experimental Methods; 6.3 Results and Discussion; 6.3.1 WSe2 Synthesis and Buffer-Layer Decoupling; 6.3.2 LEEM/LEER Measurements and Analysis.
Impurity of Precursor and Growth Steps of Epitaxial WSe2Electrolyte-Gating Electrical Measurement; 3.2.3 Results and Discussion; Epitaxial Growth of WSe2; Kinetics for WSe2 Growth; Domain Boundaries of Epitaxial WSe2; WSe2-Sapphire Interface; Electronic Transport of Epitaxial WSe2; 3.3 Conclusions; References; Chapter 4: Direct Synthesis of van der Waals Solids; 4.1 Introduction; 4.2 Experimental Methods; 4.2.1 Materials Synthesis; 4.2.2 Fabrication and Measurement of MoS2 Photosensors; 4.2.3 Materials Characterization; 4.3 Results and Discussion; 4.4 Conclusions; References.
0
8
8
8
8
This thesis represents a significant advance in our understanding of the synthesis and propertiesof two-dimensional (2D) materials. The author's work breaks new ground in the understanding of a number of 2D crystals, including atomically thin transition metal dichalcogenides, graphene, and their heterostructures, that are technologically important to next-generation electronics. In addition to critical new results on the direct growth of 2D heterostructures, it also details growth mechanisms, surface science, and device applications of "epi-grade" 2D semiconductors, which are essential to low-power electronics, as well as for extending Moore's law. Most importantly, it provides an effective alternative to mechanically exfoliate 2D layers for practical applications.
Springer Nature
com.springer.onix.9783030003326
Properties of synthetic two-dimensional materials and heterostructures.
9783030003319
Graphene.
Heterostructures.
Semiconductors.
Condensed matter physics (liquid state & solid state physics)