عنوان
پدید آورنده
موضوع
رده
کتابخانه
محل استقرار
TL49823
انگلیسی
Design and Development of GaN-Based Vertical Transistors for Increased Power Density in Power Electronics Applications
[Thesis]
Dong Ji
Chowdhury, Srabanti
University of California, Davis
2017
155
Committee members: Islam, M. Saif; Luhmann, Neville C.
Place of publication: United States, Ann Arbor; ISBN=978-0-355-76428-4
Ph.D.
Electrical and Computer Engineering
University of California, Davis
2017
Gallium nitride (GaN)-based devices have entered the power electronics market and shown excellent progress in the medium power conversion applications. For power conversions applications > 10 kW, devices with vertical geometry are preferred over lateral geometry, since the former allows more current for a given chip area, thus provides a more economical solution for high-voltage and high-current applications. Moreover, the vertical geometry is attractive for its dispersion-free performance without passivation, a phenomenon that causes high dynamic on-state resistance (Ron) in lateral geometry high electron mobility transistors (HEMTs).
Electrical engineering
Applied sciences;Cavet;Current aperture vertical electron transistor;Gallium nitride;Ogfet;Power transistor;Vertical transistor
Abraham, Monnie
Chowdhury, Srabanti
Electrical and Computer Engineering
University of California, Davis
2025922937; 10682425
مطالعه متن کتاب p
[Thesis]
276903
a
Y
