عنوان

Semiconductor Interfaces at the Sub-Nanometer Scale

9401049009

940112034X

9789401049009

9789401120340

b594982

Semiconductor Interfaces at the Sub-Nanometer Scale

[Book]

edited by H.W.M. Salemink, M.D. Pashley.

Dordrecht

Springer Netherlands : Imprint : Springer

1993

(268 pages)

NATO ASI series., Series E,, Applied sciences ;, 243.

I. Epitaxial Growth of Semiconductors --; "Surface Atomic Processes during Epitaxial Growth" --; "Formation Mechanism of CuPt-Type Sublattice Ordering for III-III-V Type Compound Semiconductors" --; "Surface Chemistry in the Si/Ge GSMBE System Studied Using RHEED" --; "Diffusion of Si in?-Doped GaAs Studied by Magneto Transport" --; "Theory of Atomic-Scale Processes during Epitaxial Growth: Current Status" --; "A Comparison of Growth by Molecular Beam Epitaxy, Metalorganic Chemical Vapour Deposition and Chemical Beam Epitaxy" --; "The Role of Surface Reconstructions in MBE Growth of GaAs" --; "A Lattice Gas Analysis of Binary Alloys on a Tetrahedral Lattice" --; "Resonant Tunnelling via the Bound States of Shallow Donors" --; II. Electronic Properties of Semiconductor Interfaces --; "Engineering of Semiconductor Heterostructures by Ultrathin Control Layers" --; "Interface Chemical Structure, Band Offsets and Optical Properties of Various III-V Compounds Heterostructures" --; "Dipole Layers at GaAs Heterojunctions and Their Investigation" --; "Clustering and Correlations on GaAs-Metal Interface" --; III. Atomic Scale Analysis of Semiconductor Interfaces --; "Cross-Sectional Scanning Tunneling Microscopy of GaAs Doping Superlattices: Pinned vs. Unpinned Surfaces" --; "Semiconductor Interfaces: Structure, Properties and Processing at the Atomic Level" --; "Epitaxial Interfaces of III-V Heterostructures: Atomic Resolution, Composition Fluctuations and Doping" --; IV. Group IV Materials --; "Group IV Strained Layer Systems" --; "MISFIT Accommodation during Heteroepitaxial Growth" --; "Smear-Out of the Ge/Si Interface in Gas Source MBE Monitored by RHEED" --; "Optical Properties of Imperfect Si-Ge Heterostructures" --; "Si1-x-yGexCy Growth and Properties of the Ternary System" --; "Atomic-Scale View of Epitaxial Layers with Cross-Sectional Scanning Tunneling Microscopy" --; V. Nanometer Scale Devices --; "Atomic-Scale Understanding and Controllability of Heterointerfaces in Quantum Microstructures" --; "Do Periodic Interface Corrugations Cause the Unusual Optical Properties of GaAs/AlAs Heterostructures Grown on Non-(100)-Oriented Substrates?" --; "Strained Layer Quantum Well Semiconductor Lasers" --; List of Participants.

This book comprises review papers by leading scientists in the fields of semiconductor growth, analysis and device structures. In particular, it contains reviews of the state-of-the-art in the following topics:
(a) theoretical and experimental treatment of epitaxial growth;
(b) electronic bandstructure on the atomic to nanometer scale in semiconductor interfaces;
(c) analysis of semiconductor interfaces and superlattices by photo electrospectroscopy, HRTEM and STM;
(d) discussion of relevant properties and criteria in Group IV and III--V devices.
All the reviews place an emphasis on the relevant properties on the atomic to nanometer scale as this is extremely important for superlattice structures and devices.
For those working in semiconductor superlattices, MBE and ultra-thin-layer (quantum) phenomena: the book provides a state of the art review and extensive reference to recent work.

Proceedings of the NATO Advanced Research Workshop on The Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale, Riva del Garda, Italy, August 31-September 2, 1992

Epitaxy -- Congresses.

Nanostructured materials -- Congresses.

Semiconductors -- Surfaces -- Congresses.

edited by H.W.M. Salemink, M.D. Pashley.

H W M Salemink

M D Pashley

[Book]

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