عنوان
پدید آورنده
موضوع
رده
کتابخانه
محل استقرار
9401040788
9401101736
9789401040785
9789401101738
b594606
Wide Band Gap Electronic Materials
[Book]
edited by Mark A. Prelas, Peter Gielisse, Galina Popovici, Boris V. Spitsyn, Tina Stacy.
Dordrecht
Springer Netherlands
1995
(552 pages)
NATO ASI Series, 3. High Technology,, 1.
Preface. Diamond:- Growth and Doping. Characterization and Properties. Applications. Amorphous and Diamond-Like Carbon Films:- Growth and Doping. Characterization and Properties. Applications. Other Wide Band Gap Semiconductors:- Growth and Doping. Characterization and Properties. Applications. Oral Presentations. Poster Presentations. Author Index. Key Word Index.
Wide Band Gap Electronic Materials covers topics including electronic doping of diamond, n -type diamond, negative electron affinity of diamond, applications of aluminum nitride, the doping of boron nitride, wide band gap electronic applications, and nanophase diamond.
One of the highlights is the description of an energy sub-band due to defects in the diamond lattice, responsible for a diamond LED which can emit red, green and blue light. Revolutionary nanostructure devices are also described, such as nanostructure transistors. It is also shown how aluminum nitride can be used in acoustic, piezo and electroluminescent devices.
Nanophase diamond particles having a narrow size distribution around 4 nm can be created by an explosive shock wave, and these can be used as seeds for growing smooth diamond films, as additives in composite materials, for nanophase electronic devices, and as the basis for superior lubricants.
Other problems covered include the heteroepitaxy of diamond films, doping of aluminum nitride, and the growth of large crystals of boron nitride.
One of the highlights is the description of an energy sub-band due to defects in the diamond lattice, responsible for a diamond LED which can emit red, green and blue light. Revolutionary nanostructure devices are also described, such as nanostructure transistors. It is also shown how aluminum nitride can be used in acoustic, piezo and electroluminescent devices.
Nanophase diamond particles having a narrow size distribution around 4 nm can be created by an explosive shock wave, and these can be used as seeds for growing smooth diamond films, as additives in composite materials, for nanophase electronic devices, and as the basis for superior lubricants.
Other problems covered include the heteroepitaxy of diamond films, doping of aluminum nitride, and the growth of large crystals of boron nitride.
Proceedings of the NATO Advanced Research Workshop on 'Wide Band Gap Electronic Materials -- Diamond, Aluminum Nitride and Boron Nitride', Minsk, Belarus, May 4--6, 1994
Electronics -- Materials -- Congresses.
Electronics -- Materials.
Wide gap semiconductors -- Congresses.
edited by Mark A. Prelas, Peter Gielisse, Galina Popovici, Boris V. Spitsyn, Tina Stacy.
Boris V Spitsyn
Galina Popovici
Mark A Prelas
Peter Gielisse
Tina Stacy
مطالعه متن کتاب [Book]
Y
