1. Introduction --; 2. Surface Space-Charge Region in Thermal Equilibrium --; 3. Surface States --; 4. Occupation of Surface States and Surface Band-Bending in Thermal Equilibrium --; 5. Surface Space-Charge Region in Non-Equilibrium --; 6. Interface States --; 7. Cleaved {110} Surfaces of III-V and II-VI Compound Semiconductors --; 8. {100} Surfaces of III-V, II-VI, and I-VII Compound Semiconductors with Zincblende Structure --; 9. {100} Surfaces of Silicon, Germanium, and Cubic Silicon Carbide --; 10. Diamond, Silicon, and Germanium {111}-2 × 1 Surfaces --; 11. Si((111))-7 × 7 and Ge((111))-c(2 × 8) Surfaces --; 12. Phase Transitions on Silicon and Germanium {111} Surfaces --; 13. {111} Surfaces of Compounds with Zincblende Structure --; 14. Monovalent Adatoms --; 15. Group-III Adatoms on Silicon Surfaces --; 16. Group-V Adatoms --; 17. Oxidation of Silicon and III-V Compound Semiconductors --; 18. Surface Passivation by Adsorbates and Surfactants --; 19. Semiconductor Interfaces --; References --; Index of Reconstructions and Adsorbates.
Semiconductor Surfaces and Interfaces deals with structural and electronic properties of semiconductor surfaces and interfaces. The first part introduces the general aspects of space-charge layers, of clean-surface and adatom-included surfaces states, and of interface states. It is followed by a presentation of experimental results on clean and adatom-covered surfaces which are explained in terms of simple physical and chemical concepts and models. Where available, results of more refined calculations are considered. A final chapter is devoted to the band lineup at semiconductor interfaces.