عنوان

Ultra-Fast Silicon Bipolar Technology

3540506381

3642743609

9783540506386

9783642743603

b573273

Ultra-Fast Silicon Bipolar Technology

[Book]

edited by Ludwig Treitinger, Mitiko Miura-Mattausch.

Berlin, Heidelberg

Springer Berlin Heidelberg

1988

(ix, 167 pages 125 illustrations)

Springer series in electronics and photonics, 27.

History, Present Trends, and Scaling of Silicon Bipolar Technology --; Self-Aligning Technology for Sub-100nm Deep Base Junction Transistors --; Vertical Scaling Considerations for Polysilicon-Emitter Bipolar Transistors --; Trench Isolation Schemes for Bipolar Devices: Benefits and Limiting Aspects --; A Salicide Base Contact Technology (SCOT) for Use in High Speed Bipolar VLSI --; Advanced Self-Alignment Technologies and Resulting Structures of High-Speed Bipolar Transistors --; Trends in Heterojunction Silicon Bipolar Transistors --; Molecular Beam Epitaxy of Silicon-Based Bipolar Structures --; Subject Index.

This book presents an overview of important current and (near) future developments of high-performance bipolar devices and the corresponding technologies. It is written by foremost experts who are themselves engaged in the developments within the leading companies, thus giving the most up-to-date results. The reviews presented here show clearly that there remains a large potential for further progress in this field. This progress is characterized by the demands for higher speed and lower power consumption for single-chip systems. It is also apparent that a large part of this potential can be realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication. The book is written in a style that should be understandable not only to experts but also to newcomers to the bipolar field.

Electronics.

Optical materials.

Surfaces (Physics)

edited by Ludwig Treitinger, Mitiko Miura-Mattausch.

Ludwig Treitinger

Mitiko Miura-Mattausch

[Book]

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