Blank Page; Title Page; Content; Invited Talks; INV 1: NEW MAGNETIC MATERIALS BASED ON DEFECTS, INTERFACES AND DOPING; INV 2: ATOMIC-RESOLUTION ELECTRON SPECTROSCOPY OF INTERFACES AND DEFECTS IN COMPLEX OXIDES; INV 3: SIGNIFICANCE OF SOLID STATE IONICS FOR TRANSPORT AND STORAGE; INV 4: ELECTROCHEMICAL DOPING OF OXIDE HETEROSTRUCTURES; INV 5: SWITCHABLE PHOTODIODE EFFECT IN FERROELECTRIC BiFeO3; INV 6: EXPLORATION OF ELECTRON SYSTEMS AT OXIDE INTERFACES; INV 7: THE INFLUENCE OF IMPERFECTIONS ON THE 2DEG TRANSPORT PROPERTIES IN THE LaAlO3-SrTiO3 SYSTEM. INV 8: CORRELATED ELECTRONIC MATERIALS: COMPUTATIONAL STUDIES OF MULTIORBITAL MODELS FOR BULK COMPOUNDS AND INTERFACES OF MAGNETIC AND SUPERCONDUCTINGMATERIALSINV 9: ELECTROLYTE GATE INDUCED METALLIZATION OF SEVERAL FACETS (101, 001, 110 and 100) OF RUTILE TiO2 AND (001) SrTiO3; INV 10: COMPLEX THERMOELECTRIC MATERIALS; INV 11: PCRAM OPERATION AT DRAM SPEEDS: EXPERIMENTAL DEMONSTRATION AND COMPUTER-SIMULATIONAL UNDERSTANDING; INV 12: ELECTRONIC PHASE CHANGE AND ENTROPIC FUNCTIONS IN TRANSITION METAL OXIDES; INV 13: DISORDER INDUCED METAL-INSULATOR TRANSITION IN PHASE CHANGE MATERIALS. INV 14: ELECTRONIC PROPERTIES OF THE INTERFACIAL LaAlO3 / SrTiO3 SYSTEMINV 15: EMERGENT PHENOMENA IN TWO-DIMENSIONAL ELECTRON GASES AT OXIDE INTERFACES; INV 16: GIANT TUNNEL ELECTRORESISTANCE IN FERROELECTRIC TUNNEL JUNCTIONS; INV 17: REVISITING THE HEXAGONAL MANGANITES; INV 18: STUDY OF MAGNETOELECTRIC EFFECTS DUE TO MULTI-SPIN VARIABLES; INV 19: BI-LAYERED RERAM: MULTI-LEVEL SWITCHING, RELIABILITY AND ITS MECHANISM FOR STORAGE CLASS MEMORY AND RECONFIGURATION LOGIC.; INV 20: SELF-ORGANIZATION IN ADAPTIVE, RECURRENT, AUTONOMOUS MEMRISTIVE CROSSNETS. INV 21: ELECTRIC FIELD CONTROL OF MAGNETIZATIONINV 22: MAGNETIC SWITCHING OF FERROELECTRIC DOMAINS AT ROOM TEMPERATURE IN A NEW MULTIFERROIC; INV 23: CONTROL OF CORRELATED ELECTRONS IN METAL-OXIDE SUPERLATTICES; INV 24: METAL-INSULATOR TRANSITIONS OF CORRELATED ELECTRONS IN OXIDE HETEROSTRUCTURES; INV 25: THEORETICAL DESIGN OF TOPOLOGICAL PHENOMENA; INV 26: MAGNETIC RECONSTRUCTIONS IN PEROVSKITE HETEROINTERFACES AND ULTRATHIN FILMS; INV 27: PROGRESS IN THE ATOMIC SWITCH; Nanosessions; Nanosession: 2D electron systems --; Atomic configurations. 2DA 1: HIGHLY CONFINED SPIN-POLARIZED TWO-DIMENSIONAL ELECTRON GAS IN SrTiO3/SrRuO3 SUPERLATTICES2DA 2: FIRST-PRINCIPLES STUDY OF INTERMIXING AND POLARIZATION AT THE DyScO3/SrTiO3 INTERFACE; 2DA 3: ATOMIC-SCALE SPECTROSCOPY OF AN OXIDE INTERFACE BETWEEN A MOTT INSULATOR AND A BAND INSULATOR; 2DA 4: INTERFACE ATOMIC STRUCTURE IN LaSrAlO4/LaNiO3/LaAlO3 HETEROSTRUCTURES; 2DA 5: TAILORING THE ELECTRONIC PROPERTIES OF THE LAO/STO INTERFACE BY CONTROLLED CATION-STOICHIOMETRY VARIATION IN STO THIN FILMS.
This collection of extended abstracts summarizes the latest research as presented at "Frontiers in Electronic Materials", a Nature conference on correlation effects and memristive phenomena, which took place in 2012. The contributions from leading authors from the US, Japan, Korea, and Europe discuss breakthroughs and challenges in fundamental research as well as the potential for future applications. Hot topics covered include: Electron correlation and unusual quantum effectsOxide heterostructures and interfacesMultiferrroics, spintronics, ferroelectrics.
Extended abstracts of the Nature conference Frontiers in electronic materials :