Diffusion and defect data., Pt. B,, Solid state phenomena ;, v. 145-146.
Ultra Clean Processing of Semiconductor Surfaces IX; Acknowledgements; Committees and Sponsors; Photo; Preface; Table of Contents; I. Physical Cleaning Methods; Direct Observation of Single Bubble Cavitation Damage for MHz Cleaning; High Speed Imaging of 1 MHz Driven Microbubbles in Contact with a Rigid Wall; Characterization of a Cavitation Bubble Structure at 230 kHz: Bubble Population, Sonoluminescence and Cleaning Potential ; Impact of Megasonic Activation with Different Chemistries on Silicon Surface in Single Wafer Tool; Impacts of Ionization Potentials and Megasonic Dispersion. The Influence of Standing Waves on Cleaning with a Megasonic NozzleMegasonic Sweeping and Silicon Wafer Cleaning; Removal of Nano-Particles by Aerosol Spray: Effect of Droplet Size and Velocity on Cleaning Performance ; High Aspect Ratio Contact Clean Study in 58nm Flash Device; High Velocity Aerosol Cleaning with Organic Solvents: Particle Removal and Substrate Damage ; Cleaning Technique Using High-Speed Steam-Water Mixed Spray; Pattern Collapse and Particle Removal Forces of Interest to Semiconductor Fabrication Process; Applications of Electrostatic Spray Techniques to Surface Cleaning. Analyzing the Collapse Force of Narrow Lines Measured by Lateral Force AFM Using an Analytical Mechanical ModelII. Particle Interactions; Reduced Particle Removal Efficiency Upon Wafer Storage; Local Distribution of Particles Deposited on Patterned Surfaces; Particle Retention Mechanism of Filter in High Temperature Chemical; Improving Process Control for Copper Electroplating through Filter Membrane Optimization; Particle --;Wafer Interactions in Semiaqueous Silicon Cleaning Systems; III. Drying. Drying of High Aspect Ratio Structures: A Comparison of Drying Techniques via Electrical Stiction AnalysisRelationship between Atmospheric Humidity and Watermark Formation in IPA Dry of Si Wafer after HF Clean; IV. Metrology; Complementary Metrology within a European Joint Laboratory; Highly Sensitive Detection of Inorganic Contamination; Trace Metallic Contamination Analysis on Wafer Edge and Bevel by TXRF and VPD-TXRF; Surface Potential Difference Imaging Applied to Wet Clean Monitoring; V. Contamination Control; Metallic Contamination Control in Leading-Edge ULSI Manufacturing. Molybdenum Contamination in Silicon: Detection and Impact on Device PerformancesDeveloping a High Volume Manufacturing Wet Clean Process to Remove BF2 Implant Induced Molybdenum Contamination; Impact of Metal-Ion Contaminated Silica Particles on Gate Oxide Integrity; Monitoring System for Airborne Molecular Contamination (AMC) in Semiconductor Manufacturing Areas and Micro-Environments; Reduction of Airborne Molecular Contamination on 300 mm Front Opening Unified POD (FOUP) and Wafers Surface by Vacuum Technology.
The contents of this publication include every conceivable issue related to contamination, cleaning and surface preparation during mainstream large-scale integrated circuit manufacture. Typically, silicon is used as the main semiconductor substrate. However, other semiconducting materials such as SiGe and SiC are currently being used in the source-sink junction areas, and materials such as Ge and III-V compounds are being considered for the transistor channel region of future-generation devices. This special collection covers every aspect of ultra-clean technology as applied to large-scale dev.