Ion Implantation in Diamond, Graphite and Related Materials
[Book]
by M. S. Dresselhaus, R. Kalish.
Berlin, Heidelberg :
Springer Berlin Heidelberg,
1992.
Springer Series in Materials Science,
22
0933-033X ;
1. Introduction -- 2. Carbon Materials: Graphite, Diamond and Others -- 2.1 Structure and Materials -- 2.2 Properties of Graphite -- 2.3 Properties of Diamond -- 3. Ion Implantation -- 3.1 Energy Loss Mechanisms -- 3.2 Parameters of Implantation -- 3.3 Radiation Damage -- 3.4 Energy Loss Simulations -- 4. Ion Beam Analysis Techniques -- 4.1 Rutherford Backscattering Spectroscopy -- 4.2 Nuclear Reaction Analysis -- 4.3 Particle Induced X-Ray Emission (PIXE) -- 4.4 Channeling -- 4.5 Elastic Recoil Detection (ERD) -- 4.6 Secondary Ion Mass Spectroscopy (SIMS) -- 4.7 Channeling Studies in Graphite-Based Materials -- 4.8 Stoichiometric Characterization of GICs by RBS -- 4.9 Ion Channeling in GICs -- 5. Other Characterization Techniques -- 5.1 Raman Spectroscopy -- 5.2 Other Optical and Magneto-Optical Techniques -- 5.3 Electron Microscopies and Spectroscopies -- 5.4 X-Ray-Related Characterization Techniques -- 5.5 Electronic Transport Measurements -- 5.6 Electron Spin Resonance (ESR) -- 5.7 Hyperfine Interactions -- 5.8 Mechanical Properties -- 6. Implantation-Induced Modifications to Graphite -- 6.1 Lattice Damage -- 6.2 Regrowth of Ion-Implanted Graphite -- 6.3 Structural Modification -- 6.4 Modification of the Electronic Structure and Transport Properties -- 6.5 Modification of Mechanical Properties -- 6.6 Implantation with Ferromagnetic Ions -- 6.7 Implantation-Enhanced Intercalation -- 6.8 Implantation with Hydrogen and Deuterium -- 7. Implantation-Induced Modifications to Graphite-Related Materials -- 7.1 Glassy Carbon -- 7.2 Carbon Fibers -- 7.3 Disordered Graphite -- 7.4 Carbon-Based Polymers -- 8. Implantation-Induced Modifications to Diamond -- 8.1 Structural Modifications and Damage-Related Electrical Conductivity -- 8.2 Volume Expansion -- 8.3 Lattice Damage -- 8.4 Damage Annealing and Implantations at Elevated Temperatures -- 8.5 Electrical Doping -- 8.6 Impurity State Identification -- 8.7 Electronic Device Realization -- 8.8 New Materials Synthesis -- 8.9 Improving Mechanical Properties -- 9. Implantation-Induced Modifications to Diamond-Related Materials -- 9.1 Diamond-Like Carbon (a-C:H) Films -- 9.2 Diamond Films -- 10. Concluding Remarks -- References.
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Carbon has always been a unique and intriguing material from a funda mental standpoint and, at the same time, a material with many technological uses. Carbon-based materials, diamond, graphite and their many deriva tives, have attracted much attention in recent years for many reasons. Ion implantation, which has proven to be most useful in modifying the near surface properties of many kinds of materials, in particular semiconductors, has also been applied to carbon-based materials. This has yielded, mainly in the last decade, many scientifically interesting and technologically impor tant results. Reports on these studies have been published in a wide variety of journals and topical conferences, which often have little disciplinary overlap, and which often address very different audiences. The need for a review to cover in an integrated way the various diverse aspects of the field has become increasingly obvious. Such a review should allow the reader to get an overview of the research that has been done thus far, to gain an ap preciation of the common features in the response of the various carbon to ion impact, and to become aware of current research oppor allotropes tunities and unresolved questions waiting to be addressed. Realizing this, and having ourselves both contributed to the field, we decided to write a review paper summarizing the experimental and theoretical status of ion implantation into diamond, graphite and related materials.