Transistors and Atoms -- Atomistic Simulations of Processes at Surfaces -- Atomistic Simulations in Materials Processing -- Atomistic Simulation of Decanano MOSFETs -- Modeling and Simulation of Heterojunction Bipolar Transistors -- Gate Oxide Reliability: Physical and Computational Models -- High-K Dielectrics: The Example of Pr2O3 -- Atomistic Simulation of Si3N4 CVD from Dichlorosilane and NH3 -- Interconnects and Propagation of High Frequency Signals -- Modeling of Electromigration in Interconnects -- Predictive Modeling of Transition Metal Gathering: Applications and Materials Science Challenges.
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Predictive simulation of semiconductor processing enables researchers and developers to extend the scaling range of semiconductor devices beyond the parameter range of empirical research. It requires a thorough understanding of the basic mechanisms employed in device fabrication, such as diffusion, ion implantation, epitaxy, defect formation and annealing, and contamination. This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool.